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ZH639D0

Three-Phase Gate Driver

100V Three-Phase, Half-Bridge Gate

The ZH639D0 is a low-voltage, high-speed three-phase half-bridge gate driver for power MOSFETs (N-channel) and IGBTs. It integrates three high-side and low-side Schmitt trigger inputs, along with three output channels featuring internal adaptive dead-time control to prevent cross-conduction.The output module incorporates balanced pull-up/pull-down circuits, eliminating the need for series resistor-diodes between the system and power transistor gates. High-side and low-side outputs are independently controlled by the input, with under-voltage protection enabled on the high-side.

data table ZH639D0 Datasheet

Characteristics and advantages

AEC-Q100 qualified

Maximum operating frequency: 500kHz

Output equivalent current capability: 2.5A

Integrated bootstrap diode

Logic input levels compatible with 3.3V/5V

Drives three-phase N-channel MOSFETs or IGBTs

High-side floating bootstrap power supply design, 120V withstand voltage

Load-adaptive dead-time control circuit

High-side under-voltage protection with built-in lockout to prevent short-circuit

Integrated pull-up/pull-down balancing circuit, no resistor-diode required with power transistor gates

Ordering Information

Ordering Information Package Pack Quantity
ZH639D0JT TSSOP20 Reel 4000
ZH639D0NU QFN24 Reel 4000

Product Application

Electric Scissors

Drill, Trigger

Documents and Resources

Semiment Product Selection Guide

Selection Guide English version
2025-10-22

ZH639D0 Datasheet

Datesheet English version
2025-10-24

Application Note for ZH639D0

Application Note

video

The ZH639D0 is a low-voltage, high-speed three-phase half-bridge gate driver for power MOSFETs (N-channel) and IGBTs. It integrates three high-side and low-side Schmitt trigger inputs, along with three output channels featuring internal adaptive dead-time control to prevent cross-conduction.The output module incorporates balanced pull-up/pull-down circuits, eliminating the need for series resistor-diodes between the system and power transistor gates. High-side and low-side outputs are independently controlled by the input, with under-voltage protection enabled on the high-side.

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