High-voltage half-bridge gate driver
600V high voltage, with high-side and low-side inputs
The ZH619A0 is a high-voltage, high-speed half-bridge gate driver for power MOSFETs and IGBTs. Its floating channel can drive N-channel power MOSFETs or IGBTs in high-side configurations up to 600V. The ZH619A0 features high-side and low-side inputs, along with two output channels incorporating internal dead time to prevent cross-conduction. High-side and low-side outputs are independently controlled by the inputs, with undervoltage protection implemented for both sides.
ZH619A0 Datasheet
Characteristics and advantages
Output current capability: IO+0.3A/-0.5A
Logic input levels compatible with 3.3V/5V/15V
Built-in under-voltage protection
Drives high-side and low-side N-channel power MOSFETs
Integrated dead-time control circuit (typical 100ns)
High-side floating bootstrap power supply design, withstanding up to 625V
High-side output phase-matched with high-side input
Low-side output phase-matched with low-side input
Ordering Information
| Ordering Information | Package | Mark |
|---|---|---|
| ZH619A0 | SOP8 | ZH619A0 |
Product Application
Documents and Resources
Semiment Product Selection Guide
ZH619A0 Datasheet
Application Note for ZH619A0
The ZH619A0 is a high-voltage, high-speed half-bridge gate driver for power MOSFETs and IGBTs. Its floating channel can drive N-channel power MOSFETs or IGBTs in high-side configurations up to 600V. The ZH619A0 features high-side and low-side inputs, along with two output channels incorporating internal dead time to prevent cross-conduction. High-side and low-side outputs are independently controlled by the inputs, with undervoltage protection implemented for both sides.
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